K4S280832F-UC75 - 128Mb F-die SDRAM

This page provides the datasheet information for the K4S280832F-UC75, a member of the K4S281632F-Uxx 128Mb F-die SDRAM family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S280832F-UC75
Manufacturer	Samsung semiconductor
File Size	174.13 KB
Description	128Mb F-die SDRAM
Datasheet	K4S280832F-UC75 Datasheet
Additional preview pages of the K4S280832F-UC75 datasheet.

K4S280832F-UC75 Product details

Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Other Datasheets by Samsung semiconductor

K4S280832F-UL75 - 128Mb F-die SDRAM
K4S280832F-TC75 - 128Mb F-die SDRAM Specification
K4S280832F-TL75 - 128Mb F-die SDRAM Specification
K4S280832A - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832C - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S280832E-TC75 - 128Mb E-die SDRAM Specification
K4S280832E-TL75 - 128Mb E-die SDRAM Specification
K4S280832I - JEDEC standard 3.3V power supply LVTTL compatible

Published: Sep 12, 2015 |