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K4S51163PF-F1L Datasheet 8m X 16bit X 4 Banks Mobile-sdram

Manufacturer: Samsung Semiconductor

Overview: K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM.

General Description

The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Key Features

  • 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S51163PF-F90 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-Y 8M x 16Bit x 4 Banks Mobile-SDRAM
K4S51163PF-YF 8M x 16Bit x 4 Banks Mobile-SDRAM
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K4S51163PF-F1L Distributor