K4S51163PF-F1L
Description
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Key Features
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto refresh
- 64ms refresh period (8K cycle)
- mercial Temperature Operation (-25°C ~ 70°C)
- 1 /CS Support
- 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free)
- Mobile-SDRAM
