Samsung semiconductor K4S51163PF-F1L
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.| Part No. | K4S51163PF-F1L |
|---|---|
| Datasheet | K4S51163PF-F1L Download |
| Manufacturer |  Samsung semiconductor |
| Description | 8M x 16Bit x 4 Banks Mobile-SDRAM |
| Buy | Stock & Price |
FEATURES
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).● EMRS cycle with address key programs.
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation.
● Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength)
● DQM for masking.
● Auto refresh.
● 64ms refresh period (8K cycle).
● Commercial Temperature Operation (-25°C ~ 70°C).
● 1 /CS Support.
● 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).
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● Mobile-SDRAM
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
