Datasheet Details
| Part number | K4S560432A |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 127.52 KB |
| Description | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
| Datasheet | K4S560432A_Samsungsemiconductor.pdf |
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Overview: K4S560432A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep.
| Part number | K4S560432A |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 127.52 KB |
| Description | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
| Datasheet | K4S560432A_Samsungsemiconductor.pdf |
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The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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K4S560432E-UC75 | SDRAM 256Mb E-die | Samsung |
| Part Number | Description |
|---|---|
| K4S560432B | 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
| K4S560432E-NC75 | SDRAM 256Mb E-die |
| K4S560432E-NCL75 | SDRAM 256Mb E-die |
| K4S560432E-TC75 | 256Mb E-die SDRAM Specification |
| K4S560432E-TL75 | 256Mb E-die SDRAM Specification |
| K4S560432J | 256Mb J-die SDRAM Specification |
| K4S560432N | 256Mb N-die SDRAM |
| K4S560832A | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S560832B | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S560832C | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |