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K4S560432E-UC75 - SDRAM 256Mb E-die

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positi.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S560832E-UC75 SDRAM 256Mb E-die
K4S561632C 256Mbit SDRAM
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K4S561632E-UC75 SDRAM 256Mb E-die
K4S510432D 512Mb D-die SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (May. 2003) - First generation for Pb_free products Revision 1.1 (August. 2003) - Corrected typo in Page #8, 9 Revision 1.2 (May. 2004) - Added Note 5. sentense of tRDL parameter Revision 1.3 (August. 2004) - Corrected typo. CMOS SDRAM Rev. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.