Datasheet4U Logo Datasheet4U.com

K4S560832E-UC75 - SDRAM 256Mb E-die

Download the K4S560832E-UC75 datasheet PDF. This datasheet also covers the K4S560432E-UC75 variant, as both devices belong to the same sdram 256mb e-die family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S560432E-UC75-Samsung.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S560832E-NC75 SDRAM 256Mb E-die Samsung semiconductor
K4S560832E-NCL75 SDRAM 256Mb E-die Samsung semiconductor
K4S560832E-TC75 256Mb E-die SDRAM Specification Samsung semiconductor
K4S560832E-TL75 256Mb E-die SDRAM Specification Samsung semiconductor
K4S560832A 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S560432E-UC75 SDRAM 256Mb E-die
K4S561632C 256Mbit SDRAM
K4S561632E-UC60 SDRAM 256Mb E-die
K4S561632E-UC75 SDRAM 256Mb E-die
K4S510432D 512Mb D-die SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (May. 2003) - First generation for Pb_free products Revision 1.1 (August. 2003) - Corrected typo in Page #8, 9 Revision 1.2 (May. 2004) - Added Note 5. sentense of tRDL parameter Revision 1.3 (August. 2004) - Corrected typo. CMOS SDRAM Rev. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.