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K4S561633C-P1H - 16Mx16 SDRAM 54CSP

General Description

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto refresh.
  • 64ms refresh period (8K cycle).

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S561633C-P1L 16Mx16 SDRAM 54CSP
K4S561633C-P75 16Mx16 SDRAM 54CSP
K4S561633C-N 16Mx16 SDRAM 54CSP
K4S561633C-RBL 16Mx16 SDRAM 54CSP
K4S561633C-RL 16Mx16 SDRAM 54CSP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • DQM for masking • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25° C ~ 70 °C). Extended Temperature Operation ( -25° C ~ 85 °C). Inderstrial Temperature Operation ( -40° C ~ 85° C).