K4S561633C-P1H Datasheet (16Mx16 SDRAM 54CSP)

Part: K4S561633C-P1H
Manufacturer: Samsung Semiconductor
Size: 59.53 KB

K4S561633C-P1H Key Features

3.0V & 3.3V power supply
LVCMOS patible with multiplexed address
Four banks operation
MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
All inputs are sampled at the positive going edge of the system clock
Burst read single-bit write operation
DQM for masking
Auto refresh
64ms refresh period (8K cycle)
mercial Temperature Operation (-25° C ~ 70 °C). Extended Temperature Operation ( -25° C ~ 85 °C). Inderstrial Temperatur

Related Samsung Semiconductor Datasheets

Part Number	Description
K4S561633C-P1L	16Mx16 SDRAM 54CSP
K4S561633C-P75	16Mx16 SDRAM 54CSP
K4S561633C-N	16Mx16 SDRAM 54CSP
K4S561633C-RBL	16Mx16 SDRAM 54CSP
K4S561633C-RL	16Mx16 SDRAM 54CSP

K4S561633C-P1H Description

The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device...