K4S56323LF-FHE
Description
The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Key Features
- VDD/VDDQ = 2.5V/2.5V
- Four banks operation
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- DQM for masking
- Auto refresh
