K4S641632C datasheet by Samsung Semiconductor.
| Part number | K4S641632C |
|---|---|
| Datasheet | K4S641632C_Samsungsemiconductor.pdf |
| File Size | 1.14 MB |
| Manufacturer | Samsung Semiconductor |
| Description | 1M x 16Bit x 4 Banks Synchronous DRAM |
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The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be...
View K4S641632H datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
K4S641632H | 64Mb H-die SDRAM | Samsung Electronics |
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K4S641632N | 64Mb N-die SDRAM | Samsung |
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4S641632D | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632E | 64Mbit SDRAM |
| K4S641632F | 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S641632H-L60 | 64Mb H-die SDRAM Specification |
| K4S641632H-L70 | 64Mb H-die SDRAM Specification |
| K4S641632H-L75 | 64Mb H-die SDRAM Specification |
| K4S641632H-TC60 | 64Mb H-die SDRAM Specification |
| K4S641632H-TC70 | 64Mb H-die SDRAM Specification |
| K4S641632H-TC75 | 64Mb H-die SDRAM Specification |
| K4S641632H-TL60 | 64Mb H-die SDRAM Specification |
