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K4S641632C - 1M x 16Bit x 4 Banks Synchronous DRAM

General Description

The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632E 64Mbit SDRAM
K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632H-L60 64Mb H-die SDRAM Specification
K4S641632H-L70 64Mb H-die SDRAM Specification

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K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.