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K4S641632C Datasheet 1m X 16bit X 4 Banks Synchronous Dram

Manufacturer: Samsung Semiconductor

Overview: K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM.

General Description

The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo K4S641632H 64Mb H-die SDRAM Samsung Electronics
Samsung Logo K4S641632N 64Mb N-die SDRAM Samsung

More Datasheets from Samsung Semiconductor

Part Number Description
K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632E 64Mbit SDRAM
K4S641632F 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632H-L60 64Mb H-die SDRAM Specification
K4S641632H-L70 64Mb H-die SDRAM Specification
K4S641632H-L75 64Mb H-die SDRAM Specification
K4S641632H-TC60 64Mb H-die SDRAM Specification
K4S641632H-TC70 64Mb H-die SDRAM Specification
K4S641632H-TC75 64Mb H-die SDRAM Specification
K4S641632H-TL60 64Mb H-die SDRAM Specification

K4S641632C Distributor