K4S641632H - 64Mb H-die SDRAM

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Samsung Electronics

Part number	K4S641632H
Manufacturer	Samsung Electronics
File Size	145.06 KB
Description	64Mb H-die SDRAM
Datasheet	K4S641632H Datasheet
Additional preview pages of the K4S641632H datasheet.

Revision 1.5 (February, 2004) - Corrected typo.

Revision 1.6 (March, 2004) - Modified Pin Description.

Revision 1.7 (May, 2004) - Added Note 5.

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

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Published: Sep 10, 2005 |