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K4S641632H

Manufacturer: Samsung Electronics

K4S641632H datasheet by Samsung Electronics.

K4S641632H datasheet preview

K4S641632H Datasheet Details

Part number K4S641632H
Datasheet K4S641632H_SamsungElectronics.pdf
File Size 145.06 KB
Manufacturer Samsung Electronics
Description 64Mb H-die SDRAM
K4S641632H page 2 K4S641632H page 3

K4S641632H Overview

Revision 1.5 (February, 2004) - Corrected typo. Revision 1.6 (March, 2004) - Modified Pin Description. Revision 1.7 (May, 2004) - Added Note.

K4S641632H Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (4K cycle)

K4S641632H-L60 from other manufacturers

View K4S641632H-L60 datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung semiconductor Logo K4S641632H-L60 64Mb H-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S641632H-L70 64Mb H-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S641632H-L75 64Mb H-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S641632H-TC60 64Mb H-die SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4S641632H-TC70 64Mb H-die SDRAM Specification Samsung semiconductor
Samsung Electronics logo - Manufacturer

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