K4S641632H-L70

Manufacturer: Samsung Semiconductor

K4S641632H-L70 datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4S641632H-L70 Datasheet Details

. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous.

JEDEC standard 3.3V power supply
LVTTL patible with multiplexed address
Four banks operation
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
All inputs are sampled at the positive going edge of the system clock
Burst read single-bit write operation
DQM (x4,x8) & L(U)DQM (x16) for masking
Auto & self refresh
64ms refresh period (4K cycle)

Part Number	Description
K4S641632H-L75	64Mb H-die SDRAM Specification
K4S641632H-L60	64Mb H-die SDRAM Specification
K4S641632H-TC60	64Mb H-die SDRAM Specification
K4S641632H-TC70	64Mb H-die SDRAM Specification
K4S641632H-TC75	64Mb H-die SDRAM Specification
K4S641632H-TL60	64Mb H-die SDRAM Specification
K4S641632H-TL70	64Mb H-die SDRAM Specification
K4S641632H-TL75	64Mb H-die SDRAM Specification
K4S641632H-UC60	64Mb H-die SDRAM Specification 54 TSOP-II
K4S641632H-UC60	64Mb H-die SDRAM Specification 54 TSOP-II