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K4S641632H-TC70 - 64Mb H-die SDRAM Specification

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Samsung semiconductor

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K4S641632H-TC70 64Mb H-die SDRAM Specification by Samsung semiconductor - Datasheet Preview — Datasheet preview – K4S641632H-TC70

Datasheet Details

Part number	K4S641632H-TC70
Manufacturer	Samsung semiconductor
File Size	144.25 KB
Description	64Mb H-die SDRAM Specification
Datasheet	K4S641632H-TC70 Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S641632H-TC70, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S641632H-TC70 datasheet.

Product details

Description

Rev.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

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Published: Apr 7, 2005 |