K4S641632H-TL75 - 64Mb H-die SDRAM Specification

This page provides the datasheet information for the K4S641632H-TL75, a member of the K4S 64Mb H-die SDRAM Specification family.

Product Overview

Samsung semiconductor

Part number	K4S641632H-TL75
Manufacturer	Samsung semiconductor
File Size	144.25 KB
Description	64Mb H-die SDRAM Specification
Datasheet	K4S641632H-TL75 Datasheet
Additional preview pages of the K4S641632H-TL75 datasheet.

Rev.

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms r.

Other Datasheets by Samsung semiconductor

Published: Apr 7, 2005 |