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K4S641632H-TL75 - 64Mb H-die SDRAM Specification

Download the K4S641632H-TL75 datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 64mb h-die sdram specification family and are provided as variant models within a single manufacturer datasheet.

General Description

Rev.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms r.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-64163.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S641632H 64Mb H-die SDRAM Samsung Electronics
K4S641632N 64Mb N-die SDRAM Samsung
K4S640832N 64Mb N-die SDRAM Samsung
K4S643232H-TC-L50 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L55 64Mb H-die (x32) SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S641632H-TL70 64Mb H-die SDRAM Specification
K4S641632H-TL60 64Mb H-die SDRAM Specification
K4S641632H-TC60 64Mb H-die SDRAM Specification
K4S641632H-TC70 64Mb H-die SDRAM Specification
K4S641632H-TC75 64Mb H-die SDRAM Specification

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) • Target spec release CMOS SDRAM Revision 0.1 (July, 2003) • Preliminary spec release Revision 0.2 (August, 2003) • Modified IBIS characteristic. Revision 1.0 (September, 2003) • Finalized Revision 1.1 (September, 2003) • Corrected IBIS Specification. Revision 1.2 (October, 2003) • Deleted speed 7C at x4/x8. Revision 1.3 (October, 2003) • Deleted AC parameter notes 5. Revision 1.4 (November, 2003) • Modified Pin Function description. Rev. 1.