• Part: K4S641632E
  • Description: 64Mbit SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 129.24 KB
Download K4S641632E Datasheet PDF
K4S641632E page 2
Page 2
K4S641632E page 3
Page 3

Datasheet Summary

CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 - Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 1M x 16Bit x 4 Banks Synchronous DRAM Features - - - - JEDEC standard 3.3V power supply LVTTL patible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K...