Datasheet4U Logo Datasheet4U.com

K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Download the K4S641632F datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 64mbit sdram 1m x 16bit x 4 banks synchronous dram lvttl family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-6416.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S641632H 64Mb H-die SDRAM Samsung Electronics
K4S641632N 64Mb N-die SDRAM Samsung
K4S640832N 64Mb N-die SDRAM Samsung
K4S643232H-TC-L50 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L55 64Mb H-die (x32) SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632D 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632E 64Mbit SDRAM
K4S641632H-L60 64Mb H-die SDRAM Specification
K4S641632H-L70 64Mb H-die SDRAM Specification

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001) • CMOS SDRAM Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. Rev.0.1 Sept. 2001 K4S641632F 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.