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K4S641632F Datasheet 64mbit Sdram 1m X 16bit X 4 Banks Synchronous Dram Lvttl

Manufacturer: Samsung Semiconductor

Overview: K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S641632F Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001) • CMOS SDRAM Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG remends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG remends tRDL=2CLK and tDAL=2CLK + tRP. Rev.0.1 Sept.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo K4S641632H 64Mb H-die SDRAM Samsung Electronics
Samsung Logo K4S641632N 64Mb N-die SDRAM Samsung

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