K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

This page provides the datasheet information for the K4S641632F, a member of the K4S 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S641632F
Manufacturer	Samsung semiconductor
File Size	133.72 KB
Description	64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S641632F Datasheet
Additional preview pages of the K4S641632F datasheet.

K4S641632F Product details

Description

The K4S641632F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

📁 Similar Datasheet

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K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM (Samsung)
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K4S643232H-UC-L50 - 2M x 32 SDRAM (Samsung)
K4S643232H-UC-L55 - 2M x 32 SDRAM (Samsung)
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Other Datasheets by Samsung semiconductor

K4S641632C - 1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632D - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632E - 64Mbit SDRAM
K4S641632H-L60 - 64Mb H-die SDRAM Specification
K4S641632H-L70 - 64Mb H-die SDRAM Specification
K4S641632H-L75 - 64Mb H-die SDRAM Specification
K4S641632H-TC60 - 64Mb H-die SDRAM Specification
K4S641632H-TC70 - 64Mb H-die SDRAM Specification

Published: Apr 7, 2005 |