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K4T1G084QA-ZCE6

Manufacturer: Samsung Semiconductor

K4T1G084QA-ZCE6 datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4T1G084QA-ZCE6 datasheet preview

K4T1G084QA-ZCE6 Datasheet Details

Part number K4T1G084QA-ZCE6
Datasheet K4T1G084QA-ZCE6 K4T1G164QA Datasheet (PDF)
File Size 654.56 KB
Manufacturer Samsung Semiconductor
Description 1Gb A-die DDR2 SDRAM Specification
K4T1G084QA-ZCE6 page 2 K4T1G084QA-ZCE6 page 3

K4T1G084QA-ZCE6 Overview

AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. Speed bin is in order of CL-tRCD-tRP. x4/x8 Package - including 8 dummy balls.

K4T1G084QA-ZCE6 Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin
  • 8 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode

K4T1G084QA-ZCE6 Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

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Part Number Description
K4T1G084QC (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
K4T1G084QD (K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
K4T1G084QG 1Gb G-die DDR2 SDRAM
K4T1G084QQ (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification
K4T1G084QR 1Gb R-die DDR2 SDRAM
K4T1G044QA 1Gb A-die DDR2 SDRAM Specification
K4T1G044QA-ZCE6 1Gb A-die DDR2 SDRAM Specification
K4T1G044QC (K4T1G044QC / K4T1G084QC) 1Gb C-die DDR2 SDRAM Specification
K4T1G044QQ (K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification
K4T1G164QA-ZCE6 1Gb A-die DDR2 SDRAM Specification

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