K4T51083QB-GCD5 Datasheet PDF - Samsung semiconductor 512Mb B-die DDR2 SDRAM Specs

K4T51083QB-GCD5 - 512Mb B-die DDR2 SDRAM

This page provides the datasheet information for the K4T51083QB-GCD5, a member of the K4T51083QB 512Mb B-die DDR2 SDRAM family.

Datasheet Summary

Description

Rev.

Features

Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4 , 8(Interleav.

Datasheet Details

Part number	K4T51083QB-GCD5
Manufacturer	Samsung semiconductor
File Size	633.79 KB
Description	512Mb B-die DDR2 SDRAM
Datasheet	K4T51083QB-GCD5 Datasheet
Additional preview pages of the K4T51083QB-GCD5 datasheet.

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Full PDF Text Transcription

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512Mb B-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.5 July 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Apr 22, 2010 |