Datasheet4U Logo Datasheet4U.com

K4X51163PC - 32M x16 Mobile-DDR SDRAM

Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK.

Internal clock signals are derived from CK/CK.

Features

  • Mobile-DDR SDRAM.
  • 1.8V power supply, 1.8V I/O power.
  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • 1 /CS.
  • 1 CKE.
  • Differential clock inputs(CK and CK).
  • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver St.

📥 Download Datasheet

Datasheet preview – K4X51163PC

Datasheet Details

Part number K4X51163PC
Manufacturer Samsung semiconductor
File Size 266.21 KB
Description 32M x16 Mobile-DDR SDRAM
Datasheet download datasheet K4X51163PC Datasheet
Additional preview pages of the K4X51163PC datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com K4X51163PC - L(F)E/G 32M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • Deep Power Down Mode • All inputs except data & DM are sampled at the positive going edge of the system clock(CK). • Data I/O transactions on both edges of data strobe, DM for masking.
Published: |