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K6E0808C1C-12 - 32Kx8 Bit High Speed CMOS Static RAM

General Description

The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Key Features

  • Fast Access Time 12, 15, 20ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 40mA(Max. ) (CMOS) : 2mA(Max. ) Operating K6E0808C1C-12 : 165mA(Max. ) K6E0808C1C-15 : 150mA(Max. ) K6E0808C1C-20 : 140mA(Max. ).
  • Single 5.0V±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Standard Pin Configuration K6E0808C1C-J : 28-SOJ-300.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K6E0808C1C-15 32Kx8 Bit High Speed CMOS Static RAM
K6E0808C1C-20 32Kx8 Bit High Speed CMOS Static RAM
K6E0808C1C-C 32Kx8 Bit High Speed CMOS Static RAM
K6E0808C1C 32Kx8 Bit High Speed CMOS Static RAM
K6E0808C1E 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C10 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C12 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-C15 32K x 8 Bit High-Speed CMOS Static RAM
K6E0808C1E-I 32K x 8 Bit High-Speed CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C parameters Previous spec. Updated spec. (12/15/20ns part) (12/15/20ns part) tOE - / 8/10ns - / 7 /9 ns tCW - /12/ - ns - /11/ - ns tHZ 8/10/10ns 6/ 7/10ns tOHZ - / 8 / - ns - / 7 / - ns tDW - / 9 / - ns - / 8 / - ns 2.2. Add VOH1=3.95V with the test condition as Vcc=5V±5% at 25°C Items Rev. 3.0 3.1. Add 28-TSOP1 Package. 3.2. Add L-version. 3.3. Add Data Rentention Characteristics. 4.1. Delete DIP Package. 4.2. Delete L-version. 4.3. Delete Data Retention Characteristics and Waveform. Feb.