K6E0808C1E-I12 - 32K x 8 Bit High-Speed CMOS Static RAM

Datasheet Summary

Description

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

Fast Access Time 10, 12, 15ns(Max. ).
Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 2mA(Max. ) 0.6mA(Max. ) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max. ) K6E0808C1E-12 : 80mA(Max. ) K6E0808C1E-15 : 80mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention : L-Ve.

Samsung semiconductor

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Datasheet Details

Part number	K6E0808C1E-I12
Manufacturer	Samsung semiconductor
File Size	181.62 KB
Description	32K x 8 Bit High-Speed CMOS Static RAM
Datasheet	K6E0808C1E-I12 Datasheet
Additional preview pages of the K6E0808C1E-I12 datasheet.

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Full PDF Text Transcription

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K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. 1998 Nov. 2. 1998 Feb. 25. 1999 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.

Published: Apr 7, 2005 |