K6F1616R6A Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 1.65~2.2V
- Low Data Retention Voltage: 1.0V(Min)
- Three State Outputs
- Package Type: 48-TBGA-7.50x9.50
- Part: K6F1616R6A
- Manufacturer: Samsung Semiconductor
- Size: 104.04 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1616R6C | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F1616R6A Description
The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.