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K6F1616R6A - CMOS SRAM

General Description

The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-7.50x9.50.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K6F1616R6C 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K6F1616R6A Family Preliminary CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark September 12, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 September 2001 K6F1616R6A Family Preliminary CMOS SRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.