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K6F1616R6A - CMOS SRAM

Datasheet Summary

Description

The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three State Outputs.
  • Package Type: 48-TBGA-7.50x9.50.

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Datasheet preview – K6F1616R6A

Datasheet Details

Part number K6F1616R6A
Manufacturer Samsung semiconductor
File Size 104.04 KB
Description CMOS SRAM
Datasheet download datasheet K6F1616R6A Datasheet
Additional preview pages of the K6F1616R6A datasheet.

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Full PDF Text Transcription

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K6F1616R6A Family Preliminary CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark September 12, 2001 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 September 2001 K6F1616R6A Family Preliminary CMOS SRAM 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.
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