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K6F1616R6A

Manufacturer: Samsung Semiconductor

K6F1616R6A datasheet by Samsung Semiconductor.

K6F1616R6A datasheet preview

K6F1616R6A Datasheet Details

Part number K6F1616R6A
Datasheet K6F1616R6A-Samsungsemiconductor.pdf
File Size 104.04 KB
Manufacturer Samsung Semiconductor
Description CMOS SRAM
K6F1616R6A page 2 K6F1616R6A page 3

K6F1616R6A Overview

The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F1616R6A Key Features

  • Process Technology: Full CMOS
  • Organization: 1M x16
  • Power Supply Voltage: 1.65~2.2V
  • Low Data Retention Voltage: 1.0V(Min)
  • Three State Outputs
  • Package Type: 48-TBGA-7.50x9.50
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More Datasheets from Samsung Semiconductor

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Part Number Description
K6F1616R6C 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6A 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616U6C 16Mb(1M x 16 bit) Low Power SRAM
K6F1616U6M 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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