K6F1616U6C Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.3V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 48-FBGA
- 6.00x7.00
- 6.00x7.00
- Part: K6F1616U6C
- Manufacturer: Samsung Semiconductor
- Size: 182.63 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1616U6A | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616U6M | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616R6A | CMOS SRAM |
| K6F1616R6C | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F1616U6C Description
The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.
K6F1616U6C Applications
- Samsung Electronics reserves the right to change products or specification without notice