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K6F1616U6C Datasheet

Manufacturer: Samsung Semiconductor
K6F1616U6C datasheet preview

Datasheet Details

Part number K6F1616U6C
Datasheet K6F1616U6C_Samsungsemiconductor.pdf
File Size 182.63 KB
Manufacturer Samsung Semiconductor
Description 16Mb(1M x 16 bit) Low Power SRAM
K6F1616U6C page 2 K6F1616U6C page 3

K6F1616U6C Overview

The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6F1616U6C Key Features

  • Process Technology: Full CMOS
  • Organization: 1M x16
  • Power Supply Voltage: 2.7~3.3V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three State Outputs
  • Package Type: 48-FBGA
  • 6.00x7.00
  • 6.00x7.00

K6F1616U6C Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

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K6F1616R6C 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF70 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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