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K6F1616U6C - 16Mb(1M x 16 bit) Low Power SRAM

General Description

The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges.

The families also support low data retention voltage for battery back-up operation with low data retention current.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x16.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 48-FBGA - 6.00x7.00 CMOS SRAM.

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Full PDF Text Transcription for K6F1616U6C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6F1616U6C. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com K6F1616U6C Family CMOS SRAM 16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT ...

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DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

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