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K6R1004C1C Datasheet

Manufacturer: Samsung Semiconductor
K6R1004C1C datasheet preview

Datasheet Details

Part number K6R1004C1C
Datasheet K6R1004C1C_Samsungsemiconductor.pdf
File Size 126.75 KB
Manufacturer Samsung Semiconductor
Description High-Speed CMOS Static RAM
K6R1004C1C page 2 K6R1004C1C page 3

K6R1004C1C Overview

The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology.

K6R1004C1C Key Features

  • Fast Access Time 10,12,15ns(Max.)
  • Single 5.0V±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention: L-ver. only
  • Center Power/Ground
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