Samsung semiconductor K6R1008C1D
CMOS SRAM
| Part No. | K6R1008C1D |
|---|---|
| Datasheet | K6R1008C1D Download |
| Manufacturer |  Samsung semiconductor |
| Description | CMOS SRAM |
| Buy | Stock & Price |
K6R1008C1D Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY PRELIMINARY CMOS SRAM Revision History Rev.No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Current modify 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item ICC(Industrial) 10ns 12ns Previous 85mA 75mA Current 75mA 65mA Draft Data June. 8. 2001 September. 9. 2001 December.18 Remark Preliminary Preliminary Preliminary Rev. 1.0 1. Final datasheet release. 2. Delete UB,LB releated AC characteristics and timing diagram. June. 19. 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, ca
