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K6R1008V1B-I - 128Kx8 Bit High Speed Static RAM

This page provides the datasheet information for the K6R1008V1B-I, a member of the K6R1008V1B-C 128Kx8 Bit High Speed Static RAM family.

Datasheet Summary

Description

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

The K6R1008V1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 5mA(Max. ) 0.7mA(Max. ) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max. ) K6R1008V1B-10 : 155mA(Max. ) K6R1008V1B-12 : 150mA(Max. ).
  • Single 3.3±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention ; L-Ver. only www. DataSheet4U. com.
  • Cen.

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Datasheet preview – K6R1008V1B-I

Datasheet Details

Part number K6R1008V1B-I
Manufacturer Samsung semiconductor
File Size 153.80 KB
Description 128Kx8 Bit High Speed Static RAM
Datasheet download datasheet K6R1008V1B-I Datasheet
Additional preview pages of the K6R1008V1B-I datasheet.

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Full PDF Text Transcription

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K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Add Capacitive load of the test environment in A.C test load. 2.4. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Change Standby and Data Retention Current for L-ver. Items Previous spec. Changed spec. ISB1 0.5mA 0.7mA IDR at 3.
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