K6R1008V1B-I Overview
The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008V1B uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology.
K6R1008V1B-I Key Features
- Fast Access Time 8,10,12ns(Max.)
- Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 5mA(Max.) 0.7mA(Max.)
- Single 3.3±0.3V Power Supply
- TTL patible Inputs and Outputs
- Fully Static Operation
- No Clock or Refresh required
- Three State Outputs
- 2V Minimum Data Retention ; L-Ver. only
- Center Power/Ground