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K6R4008V1C

Manufacturer: Samsung Semiconductor

K6R4008V1C datasheet by Samsung Semiconductor.

K6R4008V1C datasheet preview

K6R4008V1C Datasheet Details

Part number K6R4008V1C
Datasheet K6R4008V1C_Samsungsemiconductor.pdf
File Size 175.22 KB
Manufacturer Samsung Semiconductor
Description 512Kx8 Bit High Speed Static
K6R4008V1C page 2 K6R4008V1C page 3

K6R4008V1C Overview

The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1C uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology.

K6R4008V1C Key Features

  • Fast Access Time 10,12,15ns(Max.)
  • Single 3.3±0.3V Power Supply
  • TTL patible Inputs and Outputs
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention : L-Ver. only
  • Center Power/Ground
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More Datasheets from Samsung Semiconductor

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Part Number Description
K6R4008V1B 512K x8 Bit High Speed Static RAM
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K6R4008V1B-I 512K x8 Bit High Speed Static RAM
K6R4008V1B-L 512K x8 Bit High Speed Static RAM
K6R4008V1B-P 512K x8 Bit High Speed Static RAM
K6R4008V1D 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D 512K x8 Bit High Speed Static RAM
K6R4004C1C-C 1Mx4 Bit High Speed Static RAM
K6R4004C1C-E 1Mx4 Bit High Speed Static RAM
K6R4004C1C-I 1Mx4 Bit High Speed Static RAM

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