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K7A201800B Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7A201800B datasheet preview

Datasheet Details

Part number K7A201800B
Datasheet K7A201800B K7A-2036 Datasheet (PDF)
File Size 273.66 KB
Manufacturer Samsung Semiconductor
Description 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A201800B page 2 K7A201800B page 3

K7A201800B Overview

The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 64K(128K) words of 36/32(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally...

K7A201800B Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K7A203200A 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203200B 64Kx36/x32 Synchronous SRAM
K7A203600A 64Kx36-Bit Synchronous Pipelined Burst SRAM
K7A203600B 64Kx36/x32 Synchronous SRAM
K7A161800A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A 512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A161831B 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE
K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A163200A 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A163201A 512K x 36 / 32 & 1M x 18 Synchronous SRAM

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