K7A201800B - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7A201800B
Manufacturer	Samsung semiconductor
File Size	273.66 KB
Description	64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Datasheet	K7A201800B Datasheet
Note	This datasheet PDF includes multiple part numbers: K7A201800B, K7A-2036. Please refer to the document for exact specifications by model.
Additional preview pages of the K7A201800B datasheet.

Product details

Description

The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
P.

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Other Datasheets by Samsung semiconductor

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Published: Mar 29, 2006 |