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K7A201800B - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

This page provides the datasheet information for the K7A201800B, a member of the K7A-2036 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM family.

Description

The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • VDD= 3.3V+0.3V/-0.165V Power Supply.
  • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • P.

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Datasheet preview – K7A201800B

Datasheet Details

Part number K7A201800B
Manufacturer Samsung semiconductor
File Size 273.66 KB
Description 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Datasheet download datasheet K7A201800B Datasheet
Additional preview pages of the K7A201800B datasheet.

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Full PDF Text Transcription

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K7A203600B K7A203200B K7A201800B Document Title Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Jan . 17. 2002 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any queswww.DataSheet4U.com tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. www.DataSheet4U.com -1- Jan 2002 Rev 0.
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