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K7A203200A - 64Kx32-Bit Synchronous Pipelined Burst SRAM

General Description

The K7A203200A is a 2,097,152-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Key Features

  • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. 5V Tolerant Inputs Except I/O Pins. Byte Writable Func.

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Full PDF Text Transcription for K7A203200A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K7A203200A. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PRELIMINARY K7A203200A Document Title 64Kx32-Bit Synchronous Pipelined Burst SRAM, 64Kx32 Synchronous SRAM Revision History Rev. No. 0.0 1.0 History F...

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M, 64Kx32 Synchronous SRAM Revision History Rev. No. 0.0 1.0 History Final spec release. Add VDDQ Supply voltage( 2.5V ) Draft Date Nov. 10. 1998 Dec. 02. 1998 Remark Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- December 1998 Rev 1.0 PRELIMINARY K7A203200A FEATURES • • • • • • • •