K7A803601M - 256Kx36 & 512Kx18 Synchronous SRAM

Samsung Semiconductor

Datasheet Details

Part number	K7A803601M
Manufacturer	Samsung Semiconductor
File Size	462.46 KB
Description	256Kx36 & 512Kx18 Synchronous SRAM
Datasheet	K7A803601M Datasheet

Other Datasheets by Samsung Semiconductor

Part Number	Description
K7A803600B	256K x 36 & 512K x 18 Synchronous SRAM
K7A803609A	256Kx36 & 512Kx18 Synchronous SRAM
K7A803609B	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A801800B	256K x 36 & 512K x 18 Synchronous SRAM
K7A801801M	256Kx36 & 512Kx18 Synchronous SRAM
K7A801809A	256Kx36 & 512Kx18 Synchronous SRAM
K7A801809B	256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A161800A	512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A	512K x 36 / 32 & 1M x 18 Synchronous SRAM
K7A161831B	18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE

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K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.4 1. Changed tCD from 4.0ns to 4.2ns at -85. Changed tOE from 4.0ns to 4.2ns at -85. 2.