Datasheet4U Logo Datasheet4U.com

K7A803601M - 256Kx36 & 512Kx18 Synchronous SRAM

📥 Download Datasheet

Datasheet preview – K7A803601M

Datasheet Details

Part number K7A803601M
Manufacturer Samsung semiconductor
File Size 462.46 KB
Description 256Kx36 & 512Kx18 Synchronous SRAM
Datasheet download datasheet K7A803601M Datasheet
Additional preview pages of the K7A803601M datasheet.

📁 Similar Datasheet

  • K7A161830B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
  • K7A163630B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
  • K7A403600M - 128K x 36 Synchronous SRAM (Samsung)
  • K7A50D - TK7A50D (Toshiba Semiconductor)
  • K7A60W - TK7A60W (Toshiba)
  • K7A65D - Silicon N-Channel MOSFET (Toshiba)
Other Datasheets by Samsung semiconductor
  • K7A803600B - 256K x 36 & 512K x 18 Synchronous SRAM
  • K7A803609A - 256Kx36 & 512Kx18 Synchronous SRAM
  • K7A803609B - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  • K7A801800B - 256K x 36 & 512K x 18 Synchronous SRAM
  • K7A801801M - 256Kx36 & 512Kx18 Synchronous SRAM
  • K7A801809A - 256Kx36 & 512Kx18 Synchronous SRAM
  • K7A801809B - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  • K7A161800A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM

Full PDF Text Transcription

Click to expand full text
K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics. ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.4 1. Changed tCD from 4.0ns to 4.2ns at -85. Changed tOE from 4.0ns to 4.2ns at -85. 2.
Published: |