| Part number | K7A803601M |
|---|---|
| Datasheet | K7A803601M-Samsungsemiconductor.pdf |
| File Size | 462.46 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 256Kx36 & 512Kx18 Synchronous SRAM |
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History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K7A803600B | 256K x 36 & 512K x 18 Synchronous SRAM |
| K7A803609A | 256Kx36 & 512Kx18 Synchronous SRAM |
| K7A803609B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A801800B | 256K x 36 & 512K x 18 Synchronous SRAM |
| K7A801801M | 256Kx36 & 512Kx18 Synchronous SRAM |
| K7A801809A | 256Kx36 & 512Kx18 Synchronous SRAM |
| K7A801809B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A161800A | 512K x 36 / x32 & 1M x 18 Synchronous SRAM |
| K7A161801A | 512K x 36 / 32 & 1M x 18 Synchronous SRAM |
| K7A161831B | 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE |
