K7A803601M Overview
History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics.
| Part number | K7A803601M |
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| Datasheet | K7A803601M-Samsungsemiconductor.pdf |
| File Size | 462.46 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 256Kx36 & 512Kx18 Synchronous SRAM |
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History 0.0 Initial draft 0.1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. 0.2 Remove 119BGA Package Type. 0.3 Change DC Characteristics.