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K7D321874C

Manufacturer: Samsung Semiconductor

K7D321874C datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7D321874C datasheet preview

K7D321874C Datasheet Details

Part number K7D321874C
Datasheet K7D321874C K7D323674C Datasheet (PDF)
File Size 494.78 KB
Manufacturer Samsung Semiconductor
Description 1Mx36 & 2Mx18 SRAM
K7D321874C page 2 K7D321874C page 3

K7D321874C Overview

The K7D323674C and K7D321874C are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices. Single differential HSTL level clock, K and K are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, all addresses and burst control inputs are registered internally.

K7D321874C Key Features

  • 1Mx36 or 2Mx18 Organizations. 1.8~2.5V VDD/1.5V ~1.8VDDQ. HSTL Input and Outputs. Single Differential HSTL Clock. Synchr
  • Free Running Active High and Active Low Echo Clock Output Pin
  • Registered Addresses, Burst Control and Data Inputs
  • Registered Outputs
  • Double and Single Data Rate Burst Read and Write
  • Burst Count Controllable With Max Burst Length of 4
  • Interleaved and Linear Burst mode support
  • Bypass Operation Support
  • Programmable Impedance Output Drivers
  • JTAG Boundary Scan (subset of IEEE std. 1149.1)

K7D321874C Applications

  • Samsung Electronics reserves the right to change products or specification without notice

K7D321874A from other manufacturers

View K7D321874A datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung Electronics Logo K7D321874A 1Mx36 & 2Mx18 SRAM Samsung Electronics
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K7D321874A 32Mb A-die DDR SRAM
K7D323674A 32Mb A-die DDR SRAM
K7D323674C 1Mx36 & 2Mx18 SRAM
K7D161874B 512Kx36 & 1Mx18 SRAM
K7D163674B 512Kx36 & 1Mx18 SRAM

K7D321874C Distributor

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