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K7D321874C - 1Mx36 & 2Mx18 SRAM

Download the K7D321874C datasheet PDF. This datasheet also covers the K7D323674C variant, as both devices belong to the same 1mx36 & 2mx18 sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K7D323674C and K7D321874C are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.

They are organized as 1,048,576 words by 36 bits for K7D323674C and 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung's advanced CMOS technology.

Key Features

  • 1Mx36 or 2Mx18 Organizations. 1.8~2.5V VDD/1.5V ~1.8VDDQ. HSTL Input and Outputs. Single Differential HSTL Clock. Synchronous Pipeline Mode of Operation with Self-Timed Late Write.
  • Free Running Active High and Active Low Echo Clock Output Pin.
  • Registered Addresses, Burst Control and Data Inputs. 1Mx36 & 2Mx18 SRAM.
  • Registered Outputs.
  • Double and Single Data Rate Burst Read and Write.
  • Burst Count.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K7D323674C_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.