Datasheet4U Logo Datasheet4U.com

K7D321874A - 1Mx36 & 2Mx18 SRAM

This page provides the datasheet information for the K7D321874A, a member of the K7D323674A 1Mx36 & 2Mx18 SRAM family.

Datasheet Summary

Description

The K7D323674A and K7D321874A are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.

They are organized as 1,048,576 words by 36 bits for K7D323674A and 2,097,152 words by 18 bits for K7D321874A, fabricated using Samsung's advanced CMOS technology.

Features

  • : 1.5V V DDQ -> 1.5~.1.8V V DDQ - In.

📥 Download Datasheet

Datasheet preview – K7D321874A

Datasheet Details

Part number K7D321874A
Manufacturer Samsung Electronics
File Size 218.43 KB
Description 1Mx36 & 2Mx18 SRAM
Datasheet download datasheet K7D321874A Datasheet
Additional preview pages of the K7D321874A datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung Electronics

Full PDF Text Transcription

Click to expand full text
K7D323674A K7D321874A Document Title 32M DDR SYNCHRONOUS SRAM Advance www.DataSheet4U.com 1Mx36 & 2Mx18 SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial document. Remove /G operation thru the Spec. - Remove /G from PUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION, TRUTH TABLE and TIMING WAVEFORMs Add 300MHz Speed bin. - Add Part ID at ORDERING INFORMATION & I DD30 at DC CHARACTERISTICS Change ILI and I Lo at DC CHARCATERISTICS - ILI : MIN -1 -> -3, MAX 1 -> 3, ILo : MIN -1 -> -5, MAX 1 -> 5 Change the comment of Programmable Impedance Output Driver. DraftData Dec. 2002 Jan. 2003 Remark Advance Advance PRE- PUBLICATION DRAFT SUBJECT TO CHANGE WITHOUT NOTICE Change PIN CAPACITANCE : C IN : 3 -> 3.1 Change AC TEST CONDITIONS : T R/R F: 0.4/0.4 -> 0.5/0.
Published: |