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K7M163625M Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7M163625M datasheet preview

Datasheet Details

Part number K7M163625M
Datasheet K7M163625M K7M161825M Datasheet (PDF)
File Size 297.18 KB
Manufacturer Samsung Semiconductor
Description (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163625M page 2 K7M163625M page 3

K7M163625M Overview

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs. The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any bination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

K7M163625M Key Features

  • 3.3V+0.165V/-0.165V Power Supply
  • Byte Writable Function
  • Enable clock and suspend operation
  • Single READ/WRITE control pin
  • Self-Timed Write Cycle
  • Three Chip Enable for simple depth expansion with no data contention
  • A interleaved burst or a linear burst mode
  • Asynchronous output enable control
  • Power Down mode
  • TTL-Level Three-State Outputs
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More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K7M163625A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M163635B 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163225A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M321825M 1M x 36 & 2M x 18 Flow-Through NtRAM
K7M323625M 1Mx36 & 2Mx18 Flow-Through NtRAM
K7M801825B 256Kx36 & 512Kx18-Bit Flow Through NtRAM
K7M803625B 256Kx36 & 512Kx18-Bit Flow Through NtRAM

K7M163625M Distributor

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