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K7M163625M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM

This page provides the datasheet information for the K7M163625M, a member of the K7M161825M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM family.

Datasheet Summary

Description

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs.

The N tRAM TM , or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.

Features

  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • A interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mod.

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Datasheet preview – K7M163625M

Datasheet Details

Part number K7M163625M
Manufacturer Samsung semiconductor
File Size 297.18 KB
Description (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
Datasheet download datasheet K7M163625M Datasheet
Additional preview pages of the K7M163625M datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor
  • K7M163625A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM
  • K7M163635B - 512Kx36 & 1Mx18 Flow-Through NtRAM
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  • K7M161825A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM
  • K7M161825M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
  • K7M161835B - 512Kx36 & 1Mx18 Flow-Through NtRAM
  • K7M321825M - 1M x 36 & 2M x 18 Flow-Through NtRAM
  • K7M323625M - 1Mx36 & 2Mx18 Flow-Through NtRAM

Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Change tOE from 3.5ns to 4.0ns at -9 . 3. Change tOE from 3.5ns to 4.0ns at -10 . 1. Change ISB value from 60mA to 80mA at -8. 2. Change ISB value from 50mA to 70mA at -9 . 3. Change ISB value from 40mA to 60mA at -10 . 1. Changed tCYC from 12ns to 10ns at -9 . 2. Changed DC condition at Icc and parameters Icc ; from 300mA to 320mA at -8, from 260mA to 300mA at -9, from 240mA to 280mA at -10 3. Change pin allocation at 119BGA . - A4 ; from NC to A .
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