Datasheet4U Logo Datasheet4U.com
Samsung Semiconductor logo

K7M163635B Datasheet

Manufacturer: Samsung Semiconductor
K7M163635B datasheet preview

Datasheet Details

Part number K7M163635B
Datasheet K7M163635B_Samsungsemiconductor.pdf
File Size 427.71 KB
Manufacturer Samsung Semiconductor
Description 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163635B page 2 K7M163635B page 3

K7M163635B Overview

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. For updates or additional information about Samsung products, contact your nearest Samsung office.

K7M163635B Key Features

  • VDD= 2.5 or 3.3V +/- 5% Power Supply
  • Byte Writable Function
  • Enable clock and suspend operation
  • Single READ/WRITE control pin
  • Self-Timed Write Cycle
  • Three Chip Enable for simple de

K7M163635B Applications

  • Samsung Electronics reserves the right to change products or specification without notice
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K7M163625A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M163625M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M163225A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825A 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAM
K7M321825M 1M x 36 & 2M x 18 Flow-Through NtRAM
K7M323625M 1Mx36 & 2Mx18 Flow-Through NtRAM
K7M801825B 256Kx36 & 512Kx18-Bit Flow Through NtRAM
K7M803625B 256Kx36 & 512Kx18-Bit Flow Through NtRAM

K7M163635B Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts