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K7M163635B - 512Kx36 & 1Mx18 Flow-Through NtRAM

Datasheet Summary

Description

The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.

Features

  • VDD= 2.5 or 3.3V +/- 5% Power Supply.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • A interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mode.
  • TTL-Level Three-State Outputs.
  • 100-TQFP-1420A (Lead and Lead free pac.

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Datasheet Details

Part number K7M163635B
Manufacturer Samsung semiconductor
File Size 427.71 KB
Description 512Kx36 & 1Mx18 Flow-Through NtRAM
Datasheet download datasheet K7M163635B Datasheet
Additional preview pages of the K7M163635B datasheet.

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K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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