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K7M323625M Datasheet

Manufacturer: Samsung Semiconductor
K7M323625M datasheet preview

Datasheet Details

Part number K7M323625M
Datasheet K7M323625M_Samsungsemiconductor.pdf
File Size 211.08 KB
Manufacturer Samsung Semiconductor
Description 1Mx36 & 2Mx18 Flow-Through NtRAM
K7M323625M page 2 K7M323625M page 3

K7M323625M Overview

The K7M323625M and K7M321825M are 37,748,736-bits Synchronous Static SRAMs. The N tRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any bination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

K7M323625M Key Features

  • 3.3V+0.165V/-0.165V Power Supply
  • Byte Writable Function
  • Enable clock and suspend operation
  • Single READ/WRITE control pin
  • Self-Timed Write Cycle
  • Three Chip Enable for simple depth expansion with no data contention
  • A interleaved burst or a linear burst mode
  • Asynchronous output enable control
  • Power Down mode
  • TTL-Level Three-State Outputs
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