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K7M323625M - 1Mx36 & 2Mx18 Flow-Through NtRAM

General Description

The K7M323625M and K7M321825M are 37,748,736-bits Synchronous Static SRAMs.

The N tRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.

Key Features

  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • Byte Writable Function.
  • Enable clock and suspend operation.
  • Single READ/WRITE control pin.
  • Self-Timed Write Cycle.
  • Three Chip Enable for simple depth expansion with no data contention.
  • A interleaved burst or a linear burst mode.
  • Asynchronous output enable control.
  • Power Down mod.

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Full PDF Text Transcription for K7M323625M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K7M323625M. For precise diagrams, and layout, please refer to the original PDF.

K7M323625M K7M321825M Document Title 1Mx36 & 2Mx18 Flow-Through NtRAMTM 1Mx36 & 2Mx18-Bit Flow Through N tRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History 1. Initi...

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gh N tRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial document. 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2R ==> from NC to A 1. Insert pin at JTAG scan order of 165FBGA in connection with pin out change - x18/x36 ; insert Pin ID of 2R to BIT number of 69 1. Add Icc, Isb, Isb1 and Isb2 values. 1. Final datasheet release. 1. Change the Stand-by current (Isb) Before After Isb - 65 : 100 140 - 75 : 90 130 - 85 : 80 130 Isb1 : 90 110 Isb2 : 80 100 1. Delete the 119BGA and 165FBGA package 2. Delete the 6.5ns and 8.5ns speed bin Draft Date

More Datasheets from Samsung Semiconductor

Part Number Description
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