Download the K7N403601A datasheet PDF.
This datasheet also covers the K7N401801A variant, as both devices belong to the same (k7n401801a / k7n403601a) 128kx36 & 256kx18-bit pipelined ntramtm family and are provided as variant models within a single manufacturer datasheet.
General Description
The K7N403601A and K7N401801A are 4,718,592 bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Key Features
VDD=3.3V+0.165V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no datacontention.
Note: The manufacturer provides a single datasheet file (K7N401801A_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for K7N403601A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K7N403601A. For precise diagrams, and layout, please refer to the original PDF.
& 256Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed DC condition at Icc and ISB. Icc ; from 350mA to 400mA at -16, from 340mA to 390mA at -15, from 310mA to 360mA at -13, ISB ; from 130mA to 140mA at -16, from 120mA to 130mA at -15, from 120mA to 130mA at -13, 1.0 1. Final spec release 2. Changed input & output capacitance. CIN ; from 6pF to 5pF, COUT ; from 8pF to 7pF, May. 15. 2000 Final Draft Date Jan. 20. 2000 April. 03. 2000 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. rese
K7N403601A Datasheet
