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K7R161884B Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7R161884B datasheet preview

Datasheet Details

Part number K7R161884B
Datasheet K7R161884B K7R Datasheet (PDF)
File Size 418.88 KB
Manufacturer Samsung Semiconductor
Description 512Kx36 & 1Mx18 QDR II b4 SRAM
K7R161884B page 2 K7R161884B page 3

K7R161884B Overview

Change the Boundary scan exit order. Correct the Overshoot and Undershoot timing diagram. Change JTAG Block diagram.

K7R161884B Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • DLL circuitry for wide output data valid window and future freguency scaling
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed late write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 4-bit burst for both read and write operation
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More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K7R163684B 512Kx36 & 1Mx18 QDR II b4 SRAM
K7R320884M 1M x 36 & 2M x 18 QDR II b4 SRAM
K7R320982C (K7R32xx82C) QDR II b2 SRAM
K7R320982M 1M x 36 & 2M x 18 & 4M x 9 QDR II b2 SRAM
K7R321882C (K7R32xx82C) QDR II b2 SRAM
K7R321882M 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
K7R321884M 1M x 36 & 2M x 18 QDR II b4 SRAM
K7R323682C (K7R32xx82C) QDR II b2 SRAM
K7R323682M 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
K7R323684M 1M x 36 & 2M x 18 QDR II b4 SRAM

K7R161884B Distributor

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