K7R320884M Overview
on page 2 and add HSTL I/O ment 0.3 1. Update current characteristics in DC 2. Change AC timing characteristics.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | K7R320884M |
|---|---|
| Datasheet | K7R320884M K7R321884M Datasheet (PDF) |
| File Size | 202.00 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 1M x 36 & 2M x 18 QDR II b4 SRAM |
|
|
|
on page 2 and add HSTL I/O ment 0.3 1. Update current characteristics in DC 2. Change AC timing characteristics.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K7R320982C | (K7R32xx82C) QDR II b2 SRAM |
| K7R320982M | 1M x 36 & 2M x 18 & 4M x 9 QDR II b2 SRAM |
| K7R321882C | (K7R32xx82C) QDR II b2 SRAM |
| K7R321882M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| K7R321884M | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| K7R323682C | (K7R32xx82C) QDR II b2 SRAM |
| K7R323682M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| K7R323684M | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| K7R161884B | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM |