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K7R321882M

K7R321882M is 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM manufactured by Samsung Semiconductor.
K7R321882M datasheet preview

K7R321882M Datasheet

Part number K7R321882M
Download K7R321882M Datasheet (PDF)
File Size 201.88 KB
Manufacturer Samsung Semiconductor
Description 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
K7R321882M page 2 K7R321882M page 3

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K7R321882M Distributor

K7R321882M Description

on page 2 and add HSTL I/O ment Draft Date June, 30 2001 Dec. 5 2001 Remark Advance Preliminary 0.2 1. Update current characteristics in DC.

K7R321882M Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • DLL circuitry for wide output data valid window and future freguency scaling
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed early write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 2-bit burst for both read and write operation

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