| Part number | K7R321884M |
|---|---|
| Datasheet | K7R321884M_Samsungsemiconductor.pdf |
| File Size | 202.00 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 1M x 36 & 2M x 18 QDR II b4 SRAM |
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on page 2 and add HSTL I/O ment 0.3 1. Update current characteristics in DC 2. Change AC timing characteristics.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K7R321882C | (K7R32xx82C) QDR II b2 SRAM |
| K7R321882M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| K7R320884M | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| K7R320982C | (K7R32xx82C) QDR II b2 SRAM |
| K7R320982M | 1M x 36 & 2M x 18 & 4M x 9 QDR II b2 SRAM |
| K7R323682C | (K7R32xx82C) QDR II b2 SRAM |
| K7R323682M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM |
| K7R323684M | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| K7R161884B | 512Kx36 & 1Mx18 QDR II b4 SRAM |
| K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM |
