K7S1618U4C
K7S1618U4C is 512Kx36 & 1Mx18 QDR II b4 SRAM manufactured by Samsung Semiconductor.
FEATURES
- 1.8V+0.1V/-0.1V Power Supply.
- DLL circuitry for wide output data valid window and future freguency scaling.
- I/O Supply Voltage 1.5V+0.1V/-0.1V
- Separate independent read and write data ports with concurrent read and write operation
- HSTL I/O
- Full data coherency, providing most current data .
- Synchronous pipeline read with self timed late write.
- Read latency : 2.5 clock cycles
- Registered address, control and data input/output.
- DDR(Double Data Rate) Interface on read and write ports.
- Fixed 4-bit burst for both read and write operation.
- Clock-stop supports to reduce current.
- Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
- Two echo clocks (CQ and CQ) to enhance output data traceability.
- Data Valid pin(QVLD) supported
- Single address bus.
- Byte write (x18, x36) function.
- Sepatate read/write control pin(R and W)
- Simple depth expansion with no data contention.
- Programmable output impedance(ZQ).
- JTAG 1149.1 patible test access port.
- 165FBGA(11x15 ball aray) with body size of 15mmx17mm. Organization Part Number K7S1636U4C-F(E)C(I)45 X36 K7S1636U4C-F(E)C(I)40...
