K7S3218T4C
K7S3218T4C is 1Mx36 & 2Mx18 QDRTM II b4 SRAM manufactured by Samsung Semiconductor.
FEATURES
- 1.8V+0.1V/-0.1V Power Supply.
- DLL circuitry for wide output data valid window and future frequency scaling.
- I/O Supply Voltage 1.5V+0.1V/-0.1V
- Separate independent read and write data ports with concurrent read and write operation
- HSTL I/O
- Full data coherency, providing most current data .
- Synchronous pipeline read with self timed late write.
- Read latency: 2 clock cycles
- Registered address, control and data input/output.
- DDR(Double Data Rate) Interface on read and write ports.
- Fixed 4-bit burst for both read and write operation.
- Clock-stop supports to reduce current.
- Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
- Two echo clocks (CQ and CQ) to enhance output data traceability.
- Data Valid pin(QVLD) supported
- Single address bus.
- Byte write (x18, x36) function.
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