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K7S3236T4C Datasheet 1mx36 & 2mx18 Qdrtm Ii B4 Sram

Manufacturer: Samsung Semiconductor

Overview: K7S3236T4C K7S3218T4C 1Mx36 & 2Mx18 QDRTM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS pliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 1.8V+0.1V/-0.1V Power Supply.
  • DLL circuitry for wide output data valid window and future frequency scaling.
  • I/O Supply Voltage 1.5V+0.1V/-0.1V.
  • Separate independent read and write data ports with concurrent read and write operation.
  • HSTL I/O.
  • Full data coherency, providing most current data.
  • Synchronous pipeline read with self timed late write.
  • Read latency: 2 clock cycles.
  • Registered address, control and data.

More Datasheets from Samsung Semiconductor

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K7S3236T4C (K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM
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K7S3218T4C (K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7S3218T4C 1Mx36 & 2Mx18 QDRTM II b4 SRAM
K7S3218U4C 1Mx36 & 2Mx18 QDR II b4 SRAM
K7S1618T4C 512Kx36 & 1Mx18 QDR II b4 SRAM
K7S1618U4C 512Kx36 & 1Mx18 QDR II b4 SRAM
K7S1636T4C 512Kx36 & 1Mx18 QDR II b4 SRAM
K7S1636U4C 512Kx36 & 1Mx18 QDR II b4 SRAM

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