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K8S6415ETB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

This page provides the datasheet information for the K8S6415ETB, a member of the K8S6415EBB (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory family.

Description

is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B

Features

  • Single Voltage, 1.7V to 1.95V for Read and Write operations.
  • Organization - 4,194,304 x 16 bit ( Word Mode Only).
  • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15.
  • Read While Program/Erase Operation.
  • Multiple Bank Architecture - 16 Banks (4Mb Partition).
  • OTP Block : Extra 256Byte block.
  • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www. DataSheet4U. com 90ns (54MHz) / 80ns (66MHz) - Sy.

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Datasheet preview – K8S6415ETB

Datasheet Details

Part number K8S6415ETB
Manufacturer Samsung
File Size 973.64 KB
Description (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory
Datasheet download datasheet K8S6415ETB Datasheet
Additional preview pages of the K8S6415ETB datasheet.

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  • K8S6415EBB - (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

Full PDF Text Transcription

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K8S6415ET(B)B FLASH MEMORY Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 Initial Issue Draft Date October 20, 2004 Remark Revision March 22, 2005 - Specification finalized - Add the requirement and note of Quadruple word program operation Bottom boot block description is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B FEATURES • Single Voltage, 1.7V to 1.
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