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K9F1208Q0B-F page 2
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K9F1208Q0B-F Key Features

  • Voltage Supply
  • 1.8V device(K9F1208Q0B) : 1.70~1.95V
  • 2.65V device(K9F1208D0B) : 2.4~2.9V
  • 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
  • Organization
  • Memory Cell Array : (64M + 2048K)bit x 8 bit
  • Data Register : (512 + 16)bit x 8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (16K + 512)Byte

Related Samsung Semiconductor Datasheets

Part Number Description
K9F1208Q0B-D 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 64M x 8 Bit NAND Flash Memory
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
K9F1208Q0A NAND Flash Memory

K9F1208Q0B-F Description

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.