• Part: K9F1208Q0B-P
  • Description: 64M x 8 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 767.01 KB
K9F1208Q0B-P Datasheet (PDF) Download
Samsung Semiconductor
K9F1208Q0B-P

Description

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.

Key Features

  • Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
  • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.)
  • Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
  • mand Register Operation
  • Intelligent Copy-Back
  • Unique ID for Copyright Protection