Overview: www.DataSheet4U.com K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 K9F1208U0C K9F1208R0C K9F1208B0C
Document Title
64M x 8 Bits NAND Flash Memory FLASH MEMORY Revision History
Revision No. History
0.0 0.1 0.2 0.3 Initial issue. 2.7V part is added Address of Read 2 is changed (A4~A7 : Don’t care -> Fixed "Low" ) 1. Add tRPS/tRCS/tREAS parameter for status read 2. Add nWP timing guide 1. Change from tRPS/tRCS/tREAS to tRPB/tRCB/tREAB parameter for 1.8V device busy state 1. Sequential Row Read is added 1. tCRY is changed (50ns+tR(R/B) --> 5us) Draft Date
Nov. 10th 2005 July 13th 2006 Aug. 1st 2006 Oct. 12th 2006 Remark
Advance Advance Advance Advance 0.4 Nov. 14th 2006 Advance 0.5 1.0 Nov. 15th 2006 Dec.
