• Part: K9F1608W0A-TCB0
  • Description: 2M x 8 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 443.54 KB
K9F1608W0A-TCB0 Datasheet (PDF) Download
Samsung Semiconductor
K9F1608W0A-TCB0

Description

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit.

Key Features

  • Voltage Supply : 2.7V ~ 5.5V
  • Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit
  • Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register
  • 264-Byte Page Read Operation - Random Access : 10µ s(Max.) - Serial Page Access : 80ns(Min.)
  • Fast Write Cycle Time - Program time : 250µs(typ.) - Block Erase time : 2ms (typ.)
  • mand/Address/Data Multiplexed I/O port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - Data Retention : 10 years
  • mand Register Operation
  • 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) - Forward Type FLASH MEMORY