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K9F1608W0A-TIB0 - 2M x 8 Bit NAND Flash Memory

Description

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply : 2.7V ~ 5.5V.
  • Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit.
  • Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register.
  • 264-Byte Page Read Operation - Random Access : 10µ s(Max. ) - Serial Page Access : 80ns(Min. ).
  • Fast Write Cycle Time - Program time : 250µs(typ. ) - Block Erase time : 2ms (typ. ).
  • Command/Address/Data Multiplexed I.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K9F1608W0A-TCB0 2M x 8 Bit NAND Flash Memory
K9F1608W0A- 2M x 8 Bit NAND Flash Memory
K9F1208B0B 64M x 8 Bit NAND Flash Memory
K9F1208B0C FLASH MEMORY
K9F1208D0A NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K9F1608W0A-TCB0, K9F1608W0A-TIB0 Document Title 2M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet 1998. Data Sheet 1999. 1) Added CE don’ t care mode during the data-loading and reading 1.2 1.3 1) Revised real-time map-out algorithm(refer to technical notes) Changed device name - KM29W16000AT -> K9F1608W0A-TCB0 - KM29W16000AIT -> K9F1608W0A-TIB0 July 23th 1999 Sep.15th 1999 Final Final Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device.
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