K9F1608W0A-TIB0 Datasheet (2M x 8 Bit NAND Flash Memory)

Part: K9F1608W0A-TIB0
Manufacturer: Samsung Semiconductor
Size: 443.54 KB

K9F1608W0A-TIB0 Key Features

Voltage Supply : 2.7V ~ 5.5V
Organization
Memory Cell Array : (2M + 64K)bit x 8bit
Data Register : (256 + 8)bit x8bit
Automatic Program and Erase
Page Program : (256 + 8)Byte
Block Erase : (4K + 128)Byte
Status Register
264-Byte Page Read Operation
Random Access : 10µ s(Max.)

Related Samsung Semiconductor Datasheets

Part Number	Description
K9F1608W0A-TCB0	2M x 8 Bit NAND Flash Memory
K9F1608W0A-	2M x 8 Bit NAND Flash Memory
K9F1208B0B	64M x 8 Bit NAND Flash Memory
K9F1208B0C	FLASH MEMORY
K9F1208D0A	NAND Flash Memory

K9F1608W0A-TIB0 Description

The K9F1608W0A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K-byte block.