K9F1G16D0M Overview
Initial issue Draft Date July. 2001 Remark Advance 0.1 1. Iol(R/B) of 1.8V is changed.
K9F1G16D0M datasheet by Samsung Semiconductor.
| Part number | K9F1G16D0M |
|---|---|
| Datasheet | K9F1G16D0M_Samsungsemiconductor.pdf |
| File Size | 773.08 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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Initial issue Draft Date July. 2001 Remark Advance 0.1 1. Iol(R/B) of 1.8V is changed.
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K9F1G16Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G16U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08D0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08R0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0A | FLASH MEMORY |
| K9F1G08U0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0E | 1Gb E-die NAND Flash |
| K9F1G08U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |