K9F1G16Q0M datasheet by Samsung Semiconductor.
| Part number | K9F1G16Q0M |
|---|---|
| Datasheet | K9F1G16Q0M_Samsungsemiconductor.pdf |
| File Size | 729.28 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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Iol(R/B) of 1.8V is changed. A recovery time of minimum 1µs is required before internal circuit gets ready for any mand sequences as shown in Figure 17. ---> A recovery time of minimum 10µs is required before internal circuit gets ready for any mand sequences as shown in Figure 17.
View K9F1G16Q0M-PCB0 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
K9F1G16Q0M-PCB0 | 1Gb 1.8V NAND Flash Errata | Samsung |
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K9F1G16Q0M-PIB0 | 1Gb 1.8V NAND Flash Errata | Samsung |
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K9F1G16Q0M-YCB0 | 1Gb 1.8V NAND Flash Errata | Samsung |
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K9F1G16Q0M-YIB0 | 1Gb 1.8V NAND Flash Errata | Samsung |
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K9F1G16D0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G16U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08D0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08R0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0A | FLASH MEMORY |
| K9F1G08U0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08U0E | 1Gb E-die NAND Flash |
| K9F1G08U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
