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K9F2808U0M-YIB0 Key Features

  • Voltage supply : 2.7V~3.6V
  • Organization
  • Memory Cell Array : (16M + 512K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (16K + 512)Byte
  • 528-Byte Page Read Operation
  • Random Access : 10µ s(Max.)
  • Serial Page Access : 50ns(Min.)

Related Samsung Semiconductor Datasheets

Part Number Description
K9F2808U0M-YCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0M- 16M x 8 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory
K9F2808U0A 16M x 8 Bit NAND Flash Memory
K9F2808U0A- 16M x 8 Bit NAND Flash Memory

K9F2808U0M-YIB0 Description

SE is remended to coupled to GND or Vcc and should not be toggled during reading or programming. 15th 1999 Final Final 1.4 July 17th 2000 Final Note.